SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS

被引：38

作者：

AHOPELTO, J

LIPSANEN, H

SOPANEN, M

KOLJONEN, T

NIEMI, HEM

机构：

[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO,FINLAND

[2] VTT ELECTR,SF-02150 ESPOO,FINLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

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页码：1662 / 1664

页数：3

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