MASKLESS INP WIRE FORMATION ON PLANAR GAAS SUBSTRATES

被引：11

作者：

AHOPELTO, J

LEZEC, H

OCHIAI, Y

USUI, A

SAKAKI, H

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

[2] VTT,SEMICOND LAB,SF-02150 ESPOO,FINLAND

[3] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demonstrated. The selectivity of the growth was achieved by using focused ion beam to modify locally the substrate surface. The nucleation of deposited InP is enhanced on the exposed areas leading to the selectivity. Continuous 200 mu m long wires with submicron cross-sectional dimensions were obtained in a single growth process. Cross-sectional transmission electron microscope micrographs show that the number of dislocations in the wires is relatively low indicating the suitability of the present method for fabrication of nanoscale structures, e.g., quantum wires.

引用

页码：499 / 501

页数：3

共 17 条

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