MONOLAYER GROWTH AND DIRECT WRITING OF GAAS BY PULSED LASER METALORGANIC VAPOR-PHASE EPITAXY

被引：16

作者：

IWAI, S

MEGURO, T

DOI, A

AOYAGI, Y

NAMBA, S

机构：

[1] Inst of Physical & Chemical, Research, Japan

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

Crystals - Epitaxial Growth - Laser Pulses - Applications - Lithography;

D O I：

10.1016/0040-6090(88)90456-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer epitaxy (ALE) of GaAs is achieved by metalorganic vapor phase epitaxy (MOVPE) under irradiation by visible light at 350°C. The self-limiting mechanism for gallium deposition at one atomic layer on an arsenic atomic surface is realized by the selective enhancement of photochemical decomposition for triethylgallium at the arsenic atomic surface. A patterned growth of ALE is obtained by scanning a laser beam in this MOVPE technique.

引用

页码：405 / 408

页数：4

共 7 条

[1] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS
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