LASER SELECTIVE DEPOSITION OF GAAS ON SI

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] LASER CHEMICAL VAPOR-DEPOSITION - A TECHNIQUE FOR SELECTIVE AREA DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6501 - 6505

[3] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 95 - 96

[4] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4776 - &

[5] GAASP-GAINASSB SUPERLATTICES - A NEW STRUCTURE FOR ELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 477 - 482

[6] CHEMICAL VAPOR-DEPOSITION OF SILICON USING A CO2-LASER [J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 254 - 256

[7] EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[8] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[9] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[10] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] LASER CHEMICAL VAPOR-DEPOSITION - A TECHNIQUE FOR SELECTIVE AREA DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6501 - 6505

[3] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 95 - 96

[4] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4776 - &

[5] GAASP-GAINASSB SUPERLATTICES - A NEW STRUCTURE FOR ELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 477 - 482

[6] CHEMICAL VAPOR-DEPOSITION OF SILICON USING A CO2-LASER [J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 254 - 256

[7] EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[8] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[9] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[10] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680