DIRECT WRITING OF GAAS MONOLAYERS BY LASER-ASSISTED ATOMIC LAYER EPITAXY

[1] LASER SELECTIVE DEPOSITION OF GAAS ON SI [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 174 - 176

[2] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 51 - 53

[3] DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[4] LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 880 - 882

[5] KARAM NH, 1987, MATER RES SOC S P, V75, P241

[6] KARAM NH, 1986, C SERIES, V83, P171

[7] LINDLEY WT, 1986, C SERIES, V83, P135

[8] SCHLYER DJ, 1976, J ORGANOMET CHEM, V114, P9

[9] TISCHLER M, 1986, 13TH INT S GAAS REL

[10] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683

[1] LASER SELECTIVE DEPOSITION OF GAAS ON SI [J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 174 - 176

[2] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 51 - 53

[3] DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[4] LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 880 - 882

[5] KARAM NH, 1987, MATER RES SOC S P, V75, P241

[6] KARAM NH, 1986, C SERIES, V83, P171

[7] LINDLEY WT, 1986, C SERIES, V83, P135

[8] SCHLYER DJ, 1976, J ORGANOMET CHEM, V114, P9

[9] TISCHLER M, 1986, 13TH INT S GAAS REL

[10] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683