LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS

被引：23

作者：

KARAM, NH ^{[1
]}

ELMASRY, NA ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695

来源：

关键词：

D O I：

10.1063/1.97523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：880 / 882

页数：3

共 14 条

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[3] BAUERK D, 1982, APPL PHYS LETT, V40, P9
[4] LASER SELECTIVE DEPOSITION OF GAAS ON SI
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 174 - 176
[5] BEDAIR SM, J CRYST GROWTH
[6] FORMATION OF (100) GAAS ON (100) SILICON BY LASER RECRYSTALLIZATION
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1516 - 1518
[7] DONNELLY VM, 1984, APPL PHYS LETT, V44, P10
[8] PHOTODEPOSITION OF METAL-FILMS WITH ULTRAVIOLET-LASER LIGHT
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 23 - 32
[9] SPATIALLY DELINEATED GROWTH OF METAL-FILMS VIA PHOTOCHEMICAL PRE-NUCLEATION
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OSGOOD, RM
DEUTSCH, TF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 946 - 948
[10] EHRLICH DJ, 1981, THIN SOLID FILMS, V90, P287