Fluctuations and evidence for charging in the quantum hall effect

被引：66

作者：

Cobden, DH

Barnes, CHW

Ford, CJB

机构：

[1] Niels Bohr Inst, Oersted Lab, DK-2100 Copenhagen, Denmark

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.82.4695

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling factor in the gate voltage-magnetic field plane. Also, a relationship appears between the fluctuations on quantum Hall transitions and those found at low densities in zero magnetic field. These phenomena are most naturally attributed to charging effects. We argue that they are the first unambiguous manifestation of interactions in de transport in the integer quantum Hall effect. [S0031-9007(99)09312-6].

引用

页码：4695 / 4698

页数：4

共 39 条

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