Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes

被引：23

作者：

Liu, CY ^{[1
]}

Wang, A

Jang, WY

Tseng, TY

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Winbond Elect Corp, Hsinchu 300, Taiwan

[4] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei 106, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2006年 / 39卷 / 06期

关键词：

D O I：

10.1088/0022-3727/39/6/022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sputter-deposited V-doped SrZrO3 (SZO) films were deposited on textured LaNiO3 (LNO) bottom electrodes to investigate the resistance switching properties and reliabilities. The microstructures of the SZO and LNO films were characterized by x-ray diffraction. The resistance of the AI/V-doped SZO/LNO sandwich structures can be reversibly switched by operating with dc bias voltages or voltage pulses. The device with [100] orientated SZO film had better resistance switching properties and the resistance ratio was more than 1000. The effect of thermal treatment on resistance switching properties was investigated and different behaviour of the two leakage-states was found. Finally, the reliability of the device was also investigated. The device with the properties of reversible resistance switching and non-destructive readout is suitable for nonvolatile memory application.

引用

页码：1156 / 1160

页数：5

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