Particle formation in the remote plasma enhanced chemical vapor deposition of Si films from Si2H6-SiF4-H-2

被引：2

作者：

Kim, DH

Rhee, SW

机构：

[1] Lab. for Adv. Materials Processing, Department of Chemical Engineering, Pohang Univ. of Sci. and Technology

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.580110

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SIF, was added to Si2H6-H-2 to enhance the crystallinity of Si films deposited at low temperatures around 400 degrees C in a remote plasma enhanced chemical vapor deposition reactor. A grid was inserted to detect the extent of powder formation as a function of operating variables. It was found that the fluorine chemistry reduced the amount of powder formation in the gas phase and helped crystallization at low temperatures. (C) 1996 American Vacuum Society.

引用

收藏

页码：478 / 480

页数：3

相关论文

共 8 条

[1] HYDROGEN INCORPORATION IN UNDOPED MICROCRYSTALLINE SILICON [J].

JOHNSON, NM ;

READY, SE ;

BOYCE, JB ;

DOLAND, CD ;

WOLFF, SH ;

WALKER, J .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1626-1628

[2] STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS PREPARED AT LOW-TEMPERATURE BY PLASMA CHEMICAL VAPOR-DEPOSITION [J].

KAKINUMA, H ;

MOHRI, M ;

SAKAMOTO, M ;

TSURUOKA, T .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) :7374-7381

[3] GROWTH OF MICROCRYSTAL SILICON BY REMOTE PLASMA CHEMICAL VAPOR-DEPOSITION [J].

KIM, SC ;

JUNG, MH ;

JANG, J .

APPLIED PHYSICS LETTERS, 1991, 58 (03) :281-283

[4] STRUCTURAL CHARACTERIZATION OF SILICON FILMS DEPOSITED AT LOW-TEMPERATURE BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

LI, XD ;

PARK, YB ;

KIM, DH ;

RHEE, SW .

MATERIALS LETTERS, 1995, 24 (1-3) :79-83

[5] VERY-LOW-TEMPERATURE PREPARATION OF POLY-SI FILMS BY PLASMA CHEMICAL VAPOR-DEPOSITION USING SIF4/SIH4/H2 GASES [J].

MOHRI, M ;

KAKINUMA, H ;

SAKAMOTO, M ;

SAWAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5A) :L779-L782

[6] INSITU CHEMICALLY CLEANING POLY-SI GROWTH AT LOW-TEMPERATURE [J].

NAGAHARA, T ;

FUJIMOTO, K ;

KOHNO, N ;

KASHIWAGI, Y ;

KAKINOKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4555-4558

[7] EPITAXIAL-GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 250-DEGREES-C [J].

NAGAMINE, K ;

YAMADA, A ;

KONAGAI, M ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06) :L951-L953

[8] MECHANISM OF MICROCRYSTALLINE SILICON GROWTH FROM SILICON TETRAFLUORIDE AND HYDROGEN [J].

OKADA, Y ;

CHEN, J ;

CAMPBELL, IH ;

FAUCHET, PM ;

WAGNER, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :816-818