Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy

被引：32

作者：

Nakakura, CY

Hetherington, DL

Shaneyfelt, MR

Shea, PJ

Erickson, AN

机构：

[1] Sandia Natl Labs, Microelect Dev Lab, Albuquerque, NM 87185 USA

[2] Digital Instruments, Goleta, CA 93117 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 15期

关键词：

D O I：

10.1063/1.125002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report scanning capacitance microscopy (SCM) images of a working p-channel metal-oxide-semiconductor field-effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)03241-6].

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页码：2319 / 2321

页数：3

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