共 19 条
Order-disorder transition of anodic alumina nanochannel arrays grown under the guidance of focused-ion-beam patterning
被引:28
作者:

Liu, CY
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

Datta, A
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

Liu, NW
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

Peng, CY
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

Wang, YL
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
机构:
[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
关键词:
D O I:
10.1063/1.1691493
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
By anodizing an aluminum surface that has been patterned with different guiding lattices using a focused ion beam, the resulting anodic alumina nanochannel arrays exhibit different degree of order arrangement. Long-range order is achieved only when the guiding lattice is carefully matched to that of the self-organized hcp array formed locally in an unguided area. Lattice mismatch between the guiding and locally self-organized lattice leads to an order-disorder transition via the creation and annihilation of nanochannels. The driving force of the transition is attributed to the unbalance in the stress among the nanochannels. (C) 2004 American Institute of Physics.
引用
收藏
页码:2509 / 2511
页数:3
相关论文
共 19 条
[1]
Self-ordered pore structure of anodized aluminum on silicon and pattern transfer
[J].
Crouse, D
;
Lo, YH
;
Miller, AE
;
Crouse, M
.
APPLIED PHYSICS LETTERS,
2000, 76 (01)
:49-51

Crouse, D
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

Lo, YH
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

Miller, AE
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

Crouse, M
论文数: 0 引用数: 0
h-index: 0
机构: Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
[2]
Self-organized formation of hexagonal pore arrays in anodic alumina
[J].
Jessensky, O
;
Muller, F
;
Gosele, U
.
APPLIED PHYSICS LETTERS,
1998, 72 (10)
:1173-1175

Jessensky, O
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Muller, F
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Gosele, U
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3]
100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask
[J].
Kanamori, Y
;
Hane, K
;
Sai, H
;
Yugami, H
.
APPLIED PHYSICS LETTERS,
2001, 78 (02)
:142-143

Kanamori, Y
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

Hane, K
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

Sai, H
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

Yugami, H
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[4]
Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array
[J].
Kouklin, N
;
Menon, L
;
Bandyopadhyay, S
.
APPLIED PHYSICS LETTERS,
2002, 80 (09)
:1649-1651

Kouklin, N
论文数: 0 引用数: 0
h-index: 0
机构: Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

Menon, L
论文数: 0 引用数: 0
h-index: 0
机构: Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

论文数: 引用数:
h-index:
机构:
[5]
Hexagonal pore arrays with a 50-420 nm interpore distance formed by self-organization in anodic alumina
[J].
Li, AP
;
Muller, F
;
Birner, A
;
Nielsch, K
;
Gosele, U
.
JOURNAL OF APPLIED PHYSICS,
1998, 84 (11)
:6023-6026

Li, AP
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Muller, F
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Birner, A
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Nielsch, K
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

Gosele, U
论文数: 0 引用数: 0
h-index: 0
机构:
Max Planck Inst Microstruct Phys, D-06120 Halle, Germany Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[6]
On the growth of highly ordered pores in anodized aluminum oxide
[J].
Li, FY
;
Zhang, L
;
Metzger, RM
.
CHEMISTRY OF MATERIALS,
1998, 10 (09)
:2470-2480

Li, FY
论文数: 0 引用数: 0
h-index: 0
机构: Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

Zhang, L
论文数: 0 引用数: 0
h-index: 0
机构: Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

Metzger, RM
论文数: 0 引用数: 0
h-index: 0
机构: Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
[7]
Nanoelectronics - Growing Y-junction carbon nanotubes
[J].
Li, J
;
Papadopoulos, C
;
Xu, J
.
NATURE,
1999, 402 (6759)
:253-254

Li, J
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

Papadopoulos, C
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

Xu, J
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[8]
Highly-ordered carbon nanotube arrays for electronics applications
[J].
Li, J
;
Papadopoulos, C
;
Xu, JM
;
Moskovits, M
.
APPLIED PHYSICS LETTERS,
1999, 75 (03)
:367-369

Li, J
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

Papadopoulos, C
论文数: 0 引用数: 0
h-index: 0
机构: Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

Xu, JM
论文数: 0 引用数: 0
h-index: 0
机构: Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

Moskovits, M
论文数: 0 引用数: 0
h-index: 0
机构: Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[9]
New and modified anodic alumina membranes - Part III. Preparation and characterisation by gas diffusion of 5 nm pore size anodic alumina membranes
[J].
Lira, HDL
;
Paterson, R
.
JOURNAL OF MEMBRANE SCIENCE,
2002, 206 (1-2)
:375-387

Lira, HDL
论文数: 0 引用数: 0
h-index: 0
机构: Univ Glasgow, Dept Chem, Colloid & Membrane Sci Res Grp, Glasgow G12 8QQ, Lanark, Scotland

Paterson, R
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Glasgow, Dept Chem, Colloid & Membrane Sci Res Grp, Glasgow G12 8QQ, Lanark, Scotland Univ Glasgow, Dept Chem, Colloid & Membrane Sci Res Grp, Glasgow G12 8QQ, Lanark, Scotland
[10]
Ordered anodic alumina nanochannels on focused-ion-beam-prepatterned aluminum surfaces
[J].
Liu, CY
;
Datta, A
;
Wang, YL
.
APPLIED PHYSICS LETTERS,
2001, 78 (01)
:120-122

Liu, CY
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

Datta, A
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

Wang, YL
论文数: 0 引用数: 0
h-index: 0
机构: Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan