100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

被引:249
作者
Kanamori, Y
Hane, K
Sai, H
Yugami, H
机构
[1] Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Dept Machine Intelligence & Syst Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.1063/1.1339845
中图分类号
O59 [应用物理学];
学科分类号
摘要
An ordered anodic porous alumina membrane has been used as a lithographic mask of SF6 fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate. The antireflection structure consists of a deep hexagonal grating with 100 nm period and aspect ratio of 12, which is a fine two-dimensional antireflection structure. In the wavelength region from 400 to 800 nm, the reflectivity of the silicon surface decreases from around 40% to less than 1.6%. The measured results are explained well with the theoretical results calculated on the basis of rigorous coupled-wave analysis. (C) 2001 American Institute of Physics.
引用
收藏
页码:142 / 143
页数:2
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