Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

被引:12
作者
Chang, K [1 ]
Xia, JB
Peeters, FM
机构
[1] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
[2] Univ Instelling Antwerp, Dept Phys, B-2610 Antwerp, Belgium
关键词
D O I
10.1103/PhysRevB.65.115209
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.
引用
收藏
页码:1152091 / 1152095
页数:5
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