Structural, dynamical, electronic, and bonding properties of laser-heated silicon: An ab initio molecular-dynamics study

被引:84
作者
Silvestrelli, PL
Alavi, A
Parrinello, M
Frenkel, D
机构
[1] QUEENS UNIV BELFAST,SCH MATH & PHYS,ATOM SIMULAT GRP,BELFAST BT7 1NN,ANTRIM,NORTH IRELAND
[2] FOM,INST ATOM & MOL PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 07期
关键词
D O I
10.1103/PhysRevB.56.3806
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The method of ab initio molecular dynamics, based on finite-temperature density-functional theory, is used to simulate laser heating of crystalline silicon. We found that a high concentration of excited electrons dramatically weakens the covalent bonding. As a result the system undergoes a melting transition to a metallic state. We studied several structural, dynamical, electronic, and bonding properties of this phase of silicon. In contrast to ordinary liquid silicon, this liquid is characterized by a high coordination number and a strong reduction of covalent-bonding effects. However this phase is transient. In fact, by strongly reducing the level of electronic excitation, liquid silicon reverts very rapidly to its usual properties.
引用
收藏
页码:3806 / 3812
页数:7
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