Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis

被引：29

作者：

Suh, YS ^{[1
]}

Heuss, GP ^{[1
]}

Misra, V ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1453478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the Fowler-Nordheim tunneling in TaSixNy/SiO2/p-Si structures has been analyzed. The effective barrier height at the metal-oxide interface was extracted by Fowler-Nordheim current analysis. The barrier height was found to increase with increased annealing temperature. The barrier height was correlated with the extracted work function from capacitance-voltage analysis. This indicated that the work function of TaSixNy films changes under high temperature annealing from 4.2similar to4.3 eV after 400degreesC anneals to similar to4.8 eV after 900degreesC anneals. We believe that the mechanism that causes the work function to increase is the formation of a Ta-disilicide layer at the interface between the electrode and the dielectric. (C) 2002 American Institute of Physics.

引用

页码：1403 / 1405

页数：3

共 12 条

[1] Optimization of Ta-Si-N thin films for use as oxidation-resistant diffusion barriers
Cabral, C
Saenger, KL
Kotecki, DE
Harper, JME
[J]. JOURNAL OF MATERIALS RESEARCH, 2000, 15 (01) : 194 - 198
[2] DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES
DEPAS, M
VERMEIRE, B
MERTENS, PW
VANMEIRHAEGHE, RL
HEYNS, MM
[J]. SOLID-STATE ELECTRONICS, 1995, 38 (08) : 1465 - 1471
[3] Layered TaSiN as an oxidation resistant electrically conductive barrier
Grill, A
Jahnes, C
Cabral, C
[J]. JOURNAL OF MATERIALS RESEARCH, 1999, 14 (04) : 1604 - 1609
[4] Barrier properties for oxygen diffusion in a TaSiN layer
Hara, T
Tanaka, M
Sakiyama, K
Onishi, S
Ishihara, K
Kudo, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B): : L893 - L895
[5] TANTALUM-BASED DIFFUSION-BARRIERS IN SI/CU VLSI METALLIZATIONS
KOLAWA, E
CHEN, JS
REID, JS
POKELA, PJ
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1369 - 1373
[6] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[7] Murarka S.P., 1983, Silicides for VLSI applications, P71
[8] TERNARY AMORPHOUS METALLIC THIN-FILMS AS DIFFUSION-BARRIERS FOR CU METALLIZATION
NICOLET, MA
[J]. APPLIED SURFACE SCIENCE, 1995, 91 (1-4) : 269 - 276
[9] ONISHI S, 1994, IEEE IEDM, V94, P843
[10] EVALUATION OF AMORPHOUS (MO, TA, W)-SI-N DIFFUSION-BARRIERS FOR [SI]/CU METALLIZATIONS
REID, JS
KOLAWA, E
RUIZ, RP
NICOLET, MA
[J]. THIN SOLID FILMS, 1993, 236 (1-2) : 319 - 324

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