Effects of atomic-hydrogen assistance on hot-wall epitaxy growth of MnSb/GaAs heterostructures

被引：8

作者：

Ikekame, H

Yanase, Y

Ishibashi, T

Saito, T

Morishita, Y

Sato, K

机构：

[1] Faculty of Technology, Tokyo Univ. of Agric. and Technology, Koganei

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 173卷 / 1-2期

基金：

日本学术振兴会;

关键词：

MnSb; GaAs; ferromagnet/semiconductor hybrid structure; hot-wall epitaxy; atomic hydrogen;

D O I：

10.1016/S0022-0248(96)01048-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Prominent improvement of surface flatness was observed in MnSb films prepared by atomic-hydrogen assisted hot wall epitaxy technique on GaAs substrate. The effect is discussed in terms of surfactant effect of atomic hydrogen.

引用

页码：218 / 221

页数：4

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