Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure

被引:30
作者
Shen, A [1 ]
Horikoshi, Y [1 ]
Ohno, H [1 ]
Guo, SP [1 ]
机构
[1] WASEDA UNIV,SCH SCI & ENGN,TOKYO 169,JAPAN
关键词
D O I
10.1063/1.119973
中图分类号
O59 [应用物理学];
学科分类号
摘要
Reflection high-energy electron diffraction oscillations were observed during molecular beam epitaxy of GaAs at temperatures as low as 150 degrees C under various V/III beam equivalent pressure ratios using As-4 as an arsenic source. At the As/Ga beam equivalent pressure ratio of 40, the amplitude of the oscillations was shown to first decrease with the decrease of substrate temperature and then increase when the temperature was further lowered to below 300 degrees C. The oscillation characteristics at 200 degrees C were comparable to those recorded at around 600 degrees C. At fixed temperatures in the low temperature region (<350 degrees C), the oscillations were shown to be greatly affected by the V/III ratio, with the maximum amplitude at a certain V/III ratio which depends on the substrate temperature used. The strong oscillations at low temperatures and at high V/III ratios were tentatively explained by assuming that the migration of Ga atoms is enhanced on the surface passivated by excess As. (C) 1997 American Institute of Physics.
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页码:1540 / 1542
页数:3
相关论文
共 17 条
[1]  
DABIRAN AM, 1995, J CRYST GROWTH, V150, P23, DOI 10.1016/0022-0248(94)00891-4
[2]   INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1975, 50 (02) :434-450
[3]  
HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[4]   EFFECTS OF AS4 FLUX ON REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW-TEMPERATURES [J].
IBBETSON, JP ;
MIRIN, RP ;
MISHRA, UK ;
GOSSARD, AC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1050-1052
[5]   ANOMALIES IN MODFETS WITH A LOW-TEMPERATURE BUFFER [J].
LIN, BJF ;
KOCOT, CP ;
MARS, DE ;
JAEGER, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) :46-50
[6]   FORMATION OF ARSENIC PRECIPITATES IN GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES [J].
MELLOCH, MR ;
OTSUKA, N ;
WOODALL, JM ;
WARREN, AC ;
FREEOUF, JL .
APPLIED PHYSICS LETTERS, 1990, 57 (15) :1531-1533
[7]   Molecular beam epitaxy of high-quality, nonstoichiometric multiple quantum wells [J].
Melloch, MR ;
Lahiri, I ;
Nolte, DD ;
Chang, JCP ;
Harmon, ES ;
Woodall, JM ;
Li, NY ;
Tu, CW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2271-2274
[8]   STOICHIOMETRIC LOW-TEMPERATURE GAAS AND ALGAAS - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY [J].
MISSOUS, M .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) :4467-4471
[9]   Stoichiometric low temperature (SLT) GaAs and AlGaAs grown by molecular beam epitaxy [J].
Missous, M .
MICROELECTRONICS JOURNAL, 1996, 27 (4-5) :393-409
[10]   DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :179-184