Enhanced absorption by nanostructured silicon

被引：20

作者：

Bandiera, S. ^{[1
]}

Jacob, D. ^{[1
]}

Muller, T. ^{[1
]}

Marquier, F. ^{[1
]}

Laroche, M. ^{[1
]}

Greffet, J. -J. ^{[1
]}

机构：

[1] Ecole Cent Paris, Lab Energet Mol & Macroscop, Combust CNRS UPR 288, F-92295 Chatenay Malabry, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

elemental semiconductors; energy gap; infrared spectra; nanostructured materials; semiconductor thin films; silicon;

D O I：

10.1063/1.3021480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Some applications such as ultrafast detectors or high efficiency photovoltaics require absorption by thin films. However, close to the bandgap, silicon absorbs very poorly. In this letter, we show that the absorption of a 100 nm slab can be as high as 50% in the range of wavelengths 700-830 nm when using a periodic structure properly designed.

引用

页数：3

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