Ultrathin Body Poly(3-hexylthiophene) Transistors with Improved Short-Channel Performance

被引:28
作者
Wang, Chenchen [1 ]
Rivnay, Jonathan [2 ]
Himmelberger, Scott [2 ]
Vakhshouri, Kiarash [3 ]
Toney, Michael F. [4 ]
Gomez, Enrique D. [3 ]
Salleo, Alberto [2 ]
机构
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Penn State Univ, Dept Chem Engn, University Pk, PA 16802 USA
[4] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA USA
基金
美国国家科学基金会;
关键词
conjugated polymers; thin-film-transistors; interface; charge transport; organic electronics; THIN-FILM TRANSISTORS; FIELD-EFFECT MOBILITY; CHARGE-TRANSPORT; POLYMER; POLYTHIOPHENE; SEMICONDUCTOR; POLY(3-ALKYLTHIOPHENES);
D O I
10.1021/am3027103
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.
引用
收藏
页码:2342 / 2346
页数:5
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