共 26 条
Ultrathin Body Poly(3-hexylthiophene) Transistors with Improved Short-Channel Performance
被引:28
作者:
Wang, Chenchen
[1
]
Rivnay, Jonathan
[2
]
Himmelberger, Scott
[2
]
Vakhshouri, Kiarash
[3
]
Toney, Michael F.
[4
]
Gomez, Enrique D.
[3
]
Salleo, Alberto
[2
]
机构:
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Penn State Univ, Dept Chem Engn, University Pk, PA 16802 USA
[4] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA USA
基金:
美国国家科学基金会;
关键词:
conjugated polymers;
thin-film-transistors;
interface;
charge transport;
organic electronics;
THIN-FILM TRANSISTORS;
FIELD-EFFECT MOBILITY;
CHARGE-TRANSPORT;
POLYMER;
POLYTHIOPHENE;
SEMICONDUCTOR;
POLY(3-ALKYLTHIOPHENES);
D O I:
10.1021/am3027103
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.
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页码:2342 / 2346
页数:5
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