Printing methods and materials for large-area electronic devices

被引：48

作者：

Chabinyc, ML ^{[1
]}

Wong, WS ^{[1
]}

Arias, AC ^{[1
]}

Ready, S ^{[1
]}

Lujan, RA ^{[1
]}

Daniel, JH ^{[1
]}

Krusor, B ^{[1
]}

Apte, RB ^{[1
]}

Salleo, A ^{[1
]}

Street, RA ^{[1
]}

机构：

[1] Palo Alto Res Ctr Inc, Palo Alto, CA 94304 USA

来源：

PROCEEDINGS OF THE IEEE | 2005年 / 93卷 / 08期

关键词：

amorphous silicon; flat-panel display; polymer semiconductors; thin-film transistor;

D O I：

10.1109/JPROC.2005.851492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two digital printing methods for the fabrication of active matrix thin-film transistor (AM-TFT) backplanes for displays are described. A process using printed resists layers, referred to as digital lithography was used to fabricate arrays of hydrogenated amorphous silicon TFTs. TFTs were also fabricated using a combination. on of digital lithography to pattern metals and inkjet printing to pattern and deposit a polymeric semiconducting layer The relative performance of amorphous silicon and polymer TFTs were evaluated. The utility of digital lithographic processing was demonstrated by the fabrication of prototype reflective displays using electrophoretic media.

引用

收藏

页码：1491 / 1499

页数：9

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