Transport properties of ion-implanted and chemically doped polyaniline films

被引：29

作者：

Aleshin, AN

Mironkov, NB

Suvorov, AV

Conklin, JA

Su, TM

Kaner, RB

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

[2] UNIV CALIF LOS ANGELES, DEPT CHEM, LOS ANGELES, CA 90095 USA

[3] UNIV CALIF LOS ANGELES, BIOCHEM & SOLID STATE SCI CTR, LOS ANGELES, CA 90095 USA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.54.11638

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature de conductivity and magnetoconductivity of ion-implanted (Ar+) and chemically doped (H2SO4) polyaniline films have been studied. The metal-insulator transition has been observed for ion-implanted polyaniline films on increasing the irradiation dose to 3x10(17) ions cm(-2). The maximum values of the room-temperature conductivity reached 800 S cm(-1) for ion-implanted and 8 S cm(-1) far chemically doped polyaniline films. In both cases, for samples on the insulator side of the metal-insulator transition, sigma(T)=sigma(0)exp[-[T-0/T](m)], where m similar to 0.5, whereas for the most heavily ion-implanted polyaniline films sigma(T similar to-T at T>20 K; the minimum in the sigma(T) occurs at T similar to 20 K and a negative magnetoconductance Delta sigma(H,T)similar to H-2 has been observed. It is shown that electron-electron Coulomb interactions play an important role in charge-carrier transport in ion-implanted polyaniline films near the metal-insulator transition.

引用

页码：11638 / 11643

页数：6

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