Surface processing by gas cluster ion beams at the atomic (molecular) level

被引：67

作者：

Yamada, I

Matsuo, J

Insepov, Z

Takeuchi, D

Akizuki, M

Toyoda, N

机构：

[1] Ion Beam Eng. Exp. Laboratory, Kyoto University, Sakyo

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.580389

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gas cluster ion beam techniques have been developed for atomic and molecular level surface modification processing. Shallow implantation, high yield sputtering, surface smoothing, and low damage surface cleaning have been demonstrated experimentally. This article reports recent results concerning surface treatments that are distinctly different from those produced by conventional monomer ion irradiation. Possible applications of gas cluster ion beam processing to new areas of surface modifications are suggested. (C) 1996 American Vacuum Society.

引用

页码：781 / 785

页数：5

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