Aging effects in pentacene thin-film transistors: Analysis of the density of states modification

被引：36

作者：

De Angelis, F. ^{[1
]}

Cipolloni, S. ^{[1
]}

Mariucci, L. ^{[1
]}

Fortunato, G. ^{[1
]}

机构：

[1] CNR, IFN, I-00156 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2203742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field effect analysis has been employed in order to calculate the density of states of high quality pentacene thin-film transistors. The degradation of the electrical characteristics caused by the exposure to air has been studied and discussed in term of density of states modification. The calculated density of the states has been approximated by two exponential terms, as in amorphous silicon, and it has been used in a two-dimensional numerical simulation in order to reproduce the electrical characteristic variation with respect of the temperature and aging time. (c) 2006 American Institute of Physics.

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