High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer

被引：58

作者：

De Angelis, F ^{[1
]}

Cipolloni, S ^{[1
]}

Mariucci, L ^{[1
]}

Fortunato, G ^{[1
]}

机构：

[1] CNR, IFN, I-00156 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期

关键词：

D O I：

10.1063/1.1931833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors (TFTs), both in bottom contact and top contact configuration. A PMMA buffer layer allows to reduce the interaction between a pi-conjugated system of pentacene and the metal or dielectric substrate. We show that a thin PMMA buffer layer improves crystal quality along the metal contacts' boundaries, while still allowing good ohmic contact. Pentacene TFTs, including a PMMA buffer layer, show very high field-effect mobility, mu(FE)=0.65 and 1.4 cm(2)/V s, for bottom and top contact configuration, respectively, and remarkable steep subthreshold region. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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