Field-effect transistors on rubrene single crystals with parylene gate insulator

被引：398

作者：

Podzorov, V

Pudalov, VM

Gershenson, ME

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.1560869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and characterization of the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field-effect mobility 0.1-1 cm(2)/V s and the on/off ratiogreater than or equal to10(4). The temperature dependence of the mobility is discussed. (C) 2003 American Institute of Physics.

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页码：1739 / 1741

页数：3

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