Switch-on voltage in disordered organic field-effect transistors

被引:183
作者
Meijer, EJ [1 ]
Tanase, C
Blom, PWM
van Veenendaal, E
Huisman, BH
de Leeuw, DM
Klapwijk, TM
机构
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[2] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[3] DIMES, NL-2628 CJ Delft, Netherlands
[4] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
[5] Univ Groningen, DPI, NL-9747 AG Groningen, Netherlands
关键词
D O I
10.1063/1.1479210
中图分类号
O59 [应用物理学];
学科分类号
摘要
The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate voltage with a hopping model in an exponential density of states. The data can be described with reasonable values for the switch-on voltage, which is independent of temperature. This result also demonstrates that the large threshold voltage shifts as a function of temperature reported in the literature constitute a fit parameter without a clear physical basis. (C) 2002 American Institute of Physics.
引用
收藏
页码:3838 / 3840
页数:3
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