Ion beam synthesis of buried CdSe nanocrystallites in SiO2 on (100)-silicon

被引：8

作者：

Karl, H ^{[1
]}

Hipp, W ^{[1
]}

Grosshans, I ^{[1
]}

Stritzker, B ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 19卷 / 1-2期

关键词：

CdSe; nanocrystal; quantum dot; ion implantation;

D O I：

10.1016/S0928-4931(01)00436-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline precipitates of the direct band gap II-VI compound semiconductor CdSe were synthesized by sequential high dose ion implantation into thermally grown SiO2 on (100)-silicon. The implantation doses were chosen to be 4 x 10(16) and 8 x 10(16) cm(-2), respectively. Rapid thermal annealing of the as-implanted samples at temperatures of 800 and 1100 degreesC led to the formation of nanocrystalline randomly oriented precipitates of CdSe buried in an amorphous matrix of SiO2. The concentration profile of the implanted elements and the size distribution of the finally formed crystallites were analysed by thin film X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). High-resolution transmission electron microscopy (HTEM) cross-section images show that the nanocrystallites are defect-free. Moreover, transmission electron microscopy (TEM) images provide direct information on the spatial size distribution of the nanocrystals. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 58

页数：4

共 8 条

[1] Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2 [J].