Encapsulated semiconductor nanocrystals formed in insulators by ion beam synthesis

被引：123

作者：

White, CW

Budai, JD

Withrow, SP

Zhu, JG

Sonder, E

Zuhr, RA

Meldrum, A

Hembree, DM

Henderson, DO

Prawer, S

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

[2] Oak Ridge Y 12 Plant, Oak Ridge, TN USA

[3] Fisk Univ, Nashville, TN USA

[4] Univ Melbourne, Parkville, Vic 3052, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期

关键词：

Si nanocrystals; photoluminescence; CdS nanocrystals; CdSe nanocrystals; ion beam synthesis;

D O I：

10.1016/S0168-583X(98)00091-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Both elemental and compound semiconductor nanocrystals have been formed in insulators by ion beam synthesis. Si nanocrystals in SiO2 give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size dependent changes in the Si nanocrystal bandgap due to quantum confinement, but the PL results suggest that surface or defect states play an important role in FL. CdS and CdSe nanocrystals have been formed in SiO2 and in Al2O3. Their structure, size, and optical properties are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：228 / 240

页数：13

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