A continuum model for the inductively coupled plasma reactor in semiconductor processing

被引：27

作者：

Bose, D ^{[1
]}

Govindan, TR

Meyyappan, M

机构：

[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

[2] Thermosci Inst, Moffett Field, CA 94035 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 07期

关键词：

D O I：

10.1149/1.1391996

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A comprehensive continuum model is presented for the analysis of high-density plasma reactors widely used in semiconductor processing. The model couples plasma transport, neutral species dynamics, gas flow, heat transfer, and plasma power coupling from an external source. The governing transport equations are served along with Maxwell's equations for a multicomponent, multitemperature system with inductively coupled power deposition. The model and code are applied to a nitrogen discharge in an inductively coupled plasma reactor, and the predictions agree well with the experimental data. The effect of self-consistent modeling of gas flow and gas heat transfer is systematically examined and it is found to affect plasma density and uniformity at low pressures. (C) 1999 The Electrochemical Society. All rights reserved.

引用

页码：2705 / 2711

页数：7

共 17 条

[1]

CHANG CH, 1999, IN PRESS IEEE T PLAS, V27

[2] Studies of the low-pressure inductively-coupled plasma etching for a larger area wafer using plasma modeling and Langmuir probe [J].