Stamp design effect on 100 nm feature size for 8 inch NanoImprint lithography

被引:46
作者
Landis, S.
Chaix, N.
Gourgon, C.
Perret, C.
Leveder, T.
机构
[1] CEA LETI Nanotec, F-38054 Grenoble 9, France
[2] CEA LETI, Lab Technol Microelect, CNRS, F-38054 Grenoble 9, France
关键词
D O I
10.1088/0957-4484/17/10/043
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Sub-100 nm resolution on a 200 mm silicon stamp has been hot embossed into commercial Sumitomo NEB 22 resist. A single pattern, exposed with electron beam lithography, has been considered to define the stamp and thus make it possible to point out the impact of stamp design on the printing. These results may be considered as a first attempt to define rules to solve the proximity printing effects (PPEs). Moreover, a large range of initial resist thickness, from 56 to 506 nm, has been spin coated to assess the effect of polymer flow properties for the stamp cavity filling and the printed defects. A detailed analysis of the printed resist in dense hole patterns showed that the application volume conservation is enough to calculate the residual layer thickness as the height of the printed resist feature. Good accordance has been obtained between the theoretical approach and experimental results. Moreover, the impact of the pattern symmetry breakdown on mould deformation is clearly shown in this paper in the printed areas as well as in the unprinted areas.
引用
收藏
页码:2701 / 2709
页数:9
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