Soft x-ray photoemission studies of the HfO2/SiO2/Si system

被引：147

作者：

Sayan, S

Garfunkel, E

Suzer, S

机构：

[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[2] Bilkent Univ, Dept Chem, TR-06533 Bilkent, Turkey

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1450049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05+/-0.1 eV between HfO2 (in HfO2/15 Angstrom SiO2/Si) and SiO2 (in 15 Angstrom SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Angstrom SiOxNy/Si and HfO2/15 Angstrom SiO2/Si systems. (C) 2002 American Institute of Physics.

引用

页码：2135 / 2137

页数：3

共 14 条

[1] HATTORI, 1998, FUNDAMENTAL ASPECTS, P241
[2] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE
HIMPSEL, FJ
MCFEELY, FR
TALEBIBRAHIMI, A
YARMOFF, JA
HOLLINGER, G
[J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096
[3] HIGH DIELECTRIC-CONSTANT OF RF-SPUTTERED HFO2 THIN-FILMS
HSU, CT
SU, YK
YOKOYAMA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (08): : 2501 - 2504
[4] Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy
Keister, JW
Rowe, JE
Kolodziej, JJ
Niimi, H
Madey, TE
Lucovsky, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04): : 1831 - 1835
[5] Alternative dielectrics to silicon dioxide for memory and logic devices
Kingon, AI
Maria, JP
Streiffer, SK
[J]. NATURE, 2000, 406 (6799) : 1032 - 1038
[6] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY
KRAUT, EA
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977
[7] In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)(5) and H2O
Kukli, K
Aarik, J
Aidla, A
Siimon, H
Ritala, M
Leskela, M
[J]. APPLIED SURFACE SCIENCE, 1997, 112 : 236 - 242
[8] Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
Lee, BH
Kang, LG
Nieh, R
Qi, WJ
Lee, JC
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1926 - 1928
[9] Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics
Miyazaki, S
Miyazaki, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2212 - 2216
[10] AN XPS STUDY OF THE INITIAL-STAGES OF OXIDATION OF HAFNIUM
MORANT, C
GALAN, L
SANZ, JM
[J]. SURFACE AND INTERFACE ANALYSIS, 1990, 16 (1-12) : 304 - 308

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