Soft x-ray photoemission studies of the HfO2/SiO2/Si system

被引:147
作者
Sayan, S
Garfunkel, E
Suzer, S
机构
[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA
[2] Bilkent Univ, Dept Chem, TR-06533 Bilkent, Turkey
关键词
D O I
10.1063/1.1450049
中图分类号
O59 [应用物理学];
学科分类号
摘要
Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05+/-0.1 eV between HfO2 (in HfO2/15 Angstrom SiO2/Si) and SiO2 (in 15 Angstrom SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Angstrom SiOxNy/Si and HfO2/15 Angstrom SiO2/Si systems. (C) 2002 American Institute of Physics.
引用
收藏
页码:2135 / 2137
页数:3
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