Large anomalous Hall effect in a silicon-based magnetic semiconductor

被引:203
作者
Manyala, N [1 ]
Sidis, Y
Ditusa, JF
Aeppli, G
Young, DP
Fisk, Z
机构
[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[2] UCL, London Ctr Nanotechnol, London WC1E 6BT, England
[3] UCL, Dept Phys & Astron, London WC1E 6BT, England
[4] Florida State Univ, Natl High Magnet Field Facil, Tallahassee, FL 32306 USA
[5] Natl Univ Lesotho, Dept Phys & Elect, Maseru 100, Lesotho
基金
美国国家科学基金会;
关键词
D O I
10.1038/nmat1103
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn) As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of ( GaMn) As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.
引用
收藏
页码:255 / 262
页数:8
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