Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

被引：30

作者：

Johnson, JW

Baca, AG

Briggs, RD

Shul, RJ

Wendt, JR

Monier, C

Ren, F

Pearton, SJ

Dabiran, AM

Wowchack, AM

Polley, CJ

Chow, PP

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] SVT Associates, Eden Prairie, MN USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 12期

基金：

美国国家科学基金会;

关键词：

GaN; AlGaN; HEMT; MBE; SEM; barrier height;

D O I：

10.1016/S0038-1101(01)00255-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC performance of AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy was investigated for gate lengths in the range 0.1-1.2 mum. On 0.25 mum gate length devices we obtained 40 V-DS operation with > 50 mA peak I-D. The peak drain current density was 0.44 A/mm for 100 mum gate width devices with 1.2 mum gate lengths. The extrinsic transconductance (g(m)) decreased with both gate length and gate width and was greater than or equal to 75 mS/mm for all gate widths for 0.25 pin devices. E-beam written gates typically produced a slightly lower Schottky barrier height than optically patterned gates. (C) 2001 Elsevier Science Ltd. All rights reserved.

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页码：1979 / 1985

页数：7

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