GaN/AlGaN MODFET with 80 GHz f(max) and >100V gate-drain breakdown voltage

被引：30

作者：

Nguyen, NX

Keller, BP

Keller, S

Wu, YF

Le, M

Nguyen, C

Denbaars, SP

Mishra, UK

Grider, D

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT MAT SCI,SANTA BARBARA,CA 93106

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 04期

关键词：

MODFET; semiconductor growth;

D O I：

10.1049/el:19970174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the characteristics of 0.25 mu m gate-length GaN/AlGaN modulation doped field effect transistors grown by MOCVD on sapphire. A record combination of high breakdown voltage (>100V) and high frequency performance (f(T) = 27GHz, f(max) = 80GHz) was achieved, which demonstrates the excellent potential of these devices for microwave power applications.

引用

页码：334 / 335

页数：2

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