Band Structure Asymmetry of Bilayer Graphene Revealed by Infrared Spectroscopy

被引：230

作者：

Li, Z. Q. ^{[1
]}

Henriksen, E. A. ^{[2
]}

Jiang, Z. ^{[2
,3
]}

Hao, Z. ^{[4
]}

Martin, M. C. ^{[4
]}

Kim, P. ^{[2
]}

Stormer, H. L. ^{[2
,5
,6
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[4] Lawrence Berkeley Natl Lab, Adv Light Source Div, Berkeley, CA 94720 USA

[5] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[6] Bell Labs, Alcatel Lucent, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 03期

关键词：

BERRYS PHASE;

D O I：

10.1103/PhysRevLett.102.037403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observe a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer and the next-nearest-neighbor interlayer coupling. From the conductivity data, the energy difference of the two sublattices and the interlayer coupling energy are directly determined.

引用

页数：4

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