A new characterization tool for vertical profile measurement of high-aspect-ratio microstructures

被引:33
作者
Lebrasseur, E [1 ]
Pourciel, JB [1 ]
Bourouina, T [1 ]
Masuzawa, T [1 ]
Fujita, H [1 ]
机构
[1] Univ Tokyo, CNRS IIS, LIMMS, Meguro Ku, Tokyo 1538505, Japan
关键词
D O I
10.1088/0960-1317/12/3/313
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a system for the measurement of the inner profile of high-aspect-ratio microstructures. This system uses silicon micro-probes with a sharp tip at their end and an integrated piezoresistive force sensor. The probes are 1 mm long with a cross-sectional area of 20 x 20 mum(2), which allowed characterization of narrow and deep micro-holes having a radius as small as 40 mum. The measurement procedure utilizes an original algorithm, which prevents it from many unwanted phenomena. It is entirely automated by using a computer control.
引用
收藏
页码:280 / 285
页数:6
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