Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography

被引:103
作者
Fan, HJ
Fuhrmann, B
Scholz, R
Syrowatka, F
Dadgar, A
Krost, A
Zacharias, M
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Univ Halle Wittenberg, Interdisciplinary Ctr Mat Sci, Halle, Germany
[3] Otto Von Guericke Univ, Inst Phys Expt, D-39016 Magdeburg, Germany
关键词
nanosphere lithography; nanostructures; vapor-phase epitaxy; nanomaterials; zinc compounds; semiconducting II-IV materials;
D O I
10.1016/j.jcrysgro.2005.10.038
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Nanopatterned ZnO nanowire arrays are fabricated in large scale on epitaxial GaN substrates through a template-controlled process. This process involves nanosphere self-assembly and mask transfer, deposition of An nanodots, and vapor-liquid-solid (VLS) growth of ZnO nanowires. Self-assembled polystyrene nanospheres are transferred from hydrophilic glass substrate onto hydrophobic GaN layers using an elegantly simple mask transfer technique. Gold is thermally evaporated through the nanosphere mask to form ordered arrays of Au nanodots. Subsequently, ZnO nanowires are grown via VLS epitaxy mechanism catalyzed by the An nanodots. The diameters and lengths of the nanowires are strongly correlated with the An dot sizes and growth time, respectively. Cross-sectional transmission electron microscopy studies confirm the VLS epitaxy mechanism and the single crystallinity of the nanowires. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:34 / 38
页数:5
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