A true enhancement mode device technology suitable for dual mode dual band power amplifier applications

被引：12

作者：

Glass, E ^{[1
]}

Huang, J ^{[1
]}

Martinez, M ^{[1
]}

Peatman, W ^{[1
]}

Hartin, O ^{[1
]}

Valentine, W ^{[1
]}

LaBelle, M ^{[1
]}

Costa, J ^{[1
]}

Johnson, K ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85284 USA

来源：

1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS | 1999年

关键词：

D O I：

10.1109/RFIC.1999.805255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a true enhancement mode AlGaAs/InGaAs heterostructure insulated-gate FET technology that combines single supply operation with state-of-the-art linearity and efficiency performance for both digital and analog portable communications. The measured linearity and efficiency performance of this technology rivals or surpasses the results achieved by PHEMT and HBT devices reported to date. For the NADC modulation format at 1800MHz and VDS=3.6V, a power-added efficiency of 50% has been achieved at +30.6 dBm output power, -30 dBc adjacent channel power and -49 dBc alternate channel power.

引用

页码：135 / 138

页数：4

共 5 条

[1]

Glass E, 1997, IEEE MTT-S, P1399, DOI 10.1109/MWSYM.1997.596590

[2] Current path optimized structure for high drain current density and high gate-turn-on voltage enhancement mode heterostructure field effect transistors [J].

Hara, N ;

Nakasha, Y ;

Nagahara, M ;

Joshin, K ;

Watanabe, Y ;

Takikawa, M .

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, :198-201

[3]

Hayama N, 1997, IEEE MTT-S, P1307, DOI 10.1109/MWSYM.1997.596567

[4] Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications [J].

Huang, JH ;

Glass, E ;

Abrokwah, J ;

Bernhardt, B ;

Majerus, M ;

Spears, E ;

Parsey, JM ;

Scheitlin, D ;

Droopad, R ;

Mills, LA ;

Hawthorne, K ;

Blaugh, J .

GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997, 1997, :55-58

[5]

Wu DW, 1997, IEEE MTT-S, P1319, DOI 10.1109/MWSYM.1997.596570

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