Light emission from Si quantum dots

被引:113
作者
Fauchet, Philippe M. [1 ,2 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[2] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S1369-7021(04)00676-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Si quantum dots (QDs) as small as similar to 2 nm in diameter have been synthesized by a variety of techniques. Because of quantum confinement and the elimination of bulk or surface defects, these dots can emit light from the near infrared throughout the visible with quantum efficiencies in excess of 10%. The luminescence wavelength range has been extended to longer wavelengths by the addition of light-emitting rare earths such as erbium (Er). Light-emitting devices (LEDs) have been fabricated and their performances are starting to approach those of direct band gap semiconductor or organic LEDs. A search for a Si QD-based laser is even under way. The state-of-the-art in the materials science, physics, and device development of luminescent Si QDs is reviewed and areas of future research are pointed out.
引用
收藏
页码:26 / 33
页数:8
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