Demonstration of a silicon Raman laser

被引:648
作者
Boyraz, O [1 ]
Jalali, B [1 ]
机构
[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
来源
OPTICS EXPRESS | 2004年 / 12卷 / 21期
关键词
D O I
10.1364/OPEX.12.005269
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%. (C) 2004 Optical Society of America.
引用
收藏
页码:5269 / 5273
页数:5
相关论文
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