Demonstration of a silicon Raman laser

被引：648

作者：

Boyraz, O ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA

来源：

OPTICS EXPRESS | 2004年 / 12卷 / 21期

关键词：

D O I：

10.1364/OPEX.12.005269

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%. (C) 2004 Optical Society of America.

引用

页码：5269 / 5273

页数：5

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