Advances in silicon-on-insulator optoelectronics

被引:157
作者
Jalali, B [1 ]
Yegnanarayanan, S
Yoon, T
Yoshimoto, T
Rendina, I
Coppinger, F
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Hokkaido Tokai Univ, Dept Elect Engn, Sapporo, Hokkaido, Japan
[3] Natl Council Res Italy, IRECE, I-80124 Naples, Italy
关键词
CMOS; Gigabit Ethernet; integrated optics; optoelectronic; integrated circuit (OEIC); silicon-on-insulator (SOI); silicon-on-insulator photonic integrated circuit (SOIPIC);
D O I
10.1109/2944.736081
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Silicon-on-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The deep submicrometer CMOS process can produce gigabits-per-second low-noise lightwave electronics, These trends combined with economical incentives will ensure that silicon-based optoelectronics will be a player in future fiber optical networks and systems.
引用
收藏
页码:938 / 947
页数:10
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