SILICON-ON-INSULATOR MATERIAL TECHNOLOGY

被引：896

作者：

BRUEL, M

机构：

[1] LETI-CEA Département de Microtechniques, CENG, 38054 Grenoble Cedex

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 14期

关键词：

SILICON-ON-INSULATOR; WAFER BONDING;

D O I：

10.1049/el:19950805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an indepth microslicing of one oi the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.

引用

页码：1201 / 1202

页数：2

共 7 条

[1] MECHANICAL RESPONSE OF SINGLE-CRYSTAL SI TO VERY HIGH FLUENCE H+ IMPLANTATION
CHOYKE, WJ
IRWIN, RB
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HALL, BO
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[2] DISTRIBUTION OF IRRADIATION DAMAGE IN SILICON BOMBARDED WITH HYDROGEN
CHU, WK
KASTL, RH
LEVER, RF
MADER, S
MASTERS, BJ
[J]. PHYSICAL REVIEW B, 1977, 16 (09) : 3851 - 3859
[3] CHU WK, 1977, ION IMPLANTATION SEM, P483
[4] PLASMA CONTAMINATION AND WALL EROSION IN THERMONUCLEAR REACTORS
KAMINSKY, M
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (04) : 208 - &
[5] MASZARA WP, 1990, 4TH P INT S SIL INS, V90, P199
[6] MUMOLA PB, 1992, 1992 P IEEE INT SOI, P152
[7] SAINTJACQUES RG, 1983, NUCL INSTRUM METHODS, V209, P333, DOI 10.1016/0167-5087(83)90820-7

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