DISTRIBUTION OF IRRADIATION DAMAGE IN SILICON BOMBARDED WITH HYDROGEN

被引:68
作者
CHU, WK [1 ]
KASTL, RH [1 ]
LEVER, RF [1 ]
MADER, S [1 ]
MASTERS, BJ [1 ]
机构
[1] IBM CORP, DIV SYST PROD, HOPEWELL JUNCTION, NY 12533 USA
关键词
D O I
10.1103/PhysRevB.16.3851
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3851 / 3859
页数:9
相关论文
共 32 条
[1]   ENERGY LEVELS OF LIGHT NUCLEI A=13-15 [J].
AJZENBER.F .
NUCLEAR PHYSICS A, 1970, A152 (01) :1-&
[2]   ENERGY LEVELS OF LIGHT NUCLEI (7) A=11-12 [J].
AJZENBERGSELOVE, F ;
VAURITSE.T .
NUCLEAR PHYSICS A, 1968, A114 (01) :1-+
[3]  
ANDERSEN HH, UNPUBLISHED
[4]   VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J].
BARUCH, P ;
SAINTESPRIT, R ;
CONSTANTINESCU, C ;
PFISTER, JC .
DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :76-&
[5]  
Baruch P., 1975, Lattice Defects in Semiconductors, 1974, P453
[6]   REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION [J].
BARUCH, P ;
MONNIER, J ;
BLANCHARD, B ;
CASTAING, C .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :77-80
[7]  
BARUCH P, 1975, ION IMPLANTATION SEM, P189
[8]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[9]  
CHU WK, 1976, 5TH P INT C ION IMPL
[10]   STRESS-INDUCED EFFECTS IN SPUTTERING AND SURFACE ANALYSIS [J].
DEARNALEY, G .
APPLIED PHYSICS LETTERS, 1976, 28 (05) :244-245