MECHANICAL RESPONSE OF SINGLE-CRYSTAL SI TO VERY HIGH FLUENCE H+ IMPLANTATION

被引：14

作者：

CHOYKE, WJ ^{[1
]}

IRWIN, RB ^{[1
]}

MCGRUER, JN ^{[1
]}

TOWNSEND, JR ^{[1
]}

DOYLE, NJ ^{[1
]}

HALL, BO ^{[1
]}

SPITZNAGEL, JA ^{[1
]}

WOOD, S ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,RES & DEV,PITTSBURGH,PA 15235

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90831-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：407 / 412

页数：6

共 17 条

[1] ANDERSON HH, 1977, HYDROGEN STOPPING PO, V3
[2] BRICE DK, 1981, J NUCL MATER, V103, P503
[3] DISTRIBUTION OF IRRADIATION DAMAGE IN SILICON BOMBARDED WITH HYDROGEN
CHU, WK
KASTL, RH
LEVER, RF
MADER, S
MASTERS, BJ
[J]. PHYSICAL REVIEW B, 1977, 16 (09) : 3851 - 3859
[4] CHU WK, 1977, ION IMPLANTATION SEM, P483
[5] Chu WK., 1978, BACKSCATTERING SPECT
[6] EDINGTON JW, 1976, PRACTICAL ELECTRON M, P138
[7] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE
EERNISSE, EP
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 581 - &
[8] GEWARD L, 1973, Z PHYS, V259, P313
[9] HIGH FLUENCE DEUTERON BOMBARDMENT OF SILICON
JOHNSON, PB
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (3-4): : 159 - 167
[10] HYDROGEN IMPLANTATION IN SILICON BETWEEN 1.5 AND 60 KEV
LIGEON, E
GUIVARCH, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 27 (3-4): : 129 - 137