Two-dimensional numerical simulation of solid-phase-crystallized polysilicon thin-film transistor characteristics

被引：44

作者：

Chou, TKA ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Display Technol & Mfg, Ann Arbor, MI 48109 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

two-dimensional (2-D) numerical simulation; polysilicon (poly-Si); thin-film transistors (TFTs); interface; grain boundary; density of state (DOS); ON-state; subthreshold; OFF-state;

D O I：

10.1143/JJAP.38.2251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new two-dimensional (2-D) numerical simulation model for the solid-phase-crystallized polysilicon (poly-Si) thin-film transistors (TFTs) is presented in this paper. The proposed model is mainly based on the defects located at the poly-Si/gate oxide and poly-Si/buffer oxide interfaces and at the intergrain boundaries. The simulation results have shown to be consistent with the experimental TFT data. It has been demonstrated that the interface/grain boundary trap states have different effects on the conduction mechanisms of the poly-Si TFTs: The characteristics of the poly-Si TFTs are discussed in detail.

引用

页码：2251 / 2255

页数：5

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