Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN

被引：25

作者：

Kurtz, S ^{[1
]}

Reedy, R ^{[1
]}

Keyes, B ^{[1
]}

Barber, GD ^{[1
]}

Geisz, JF ^{[1
]}

Friedman, DJ ^{[1
]}

McMahon, WE ^{[1
]}

Olson, JM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 2-3期

关键词：

metalorganic chemical vapor deposition; organometallic vapor phase epitaxy; arsenides; gallium compounds; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)01712-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs1-xNx by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.

引用

页码：323 / 326

页数：4