Atomistic simulations of structural relaxation processes in amorphous silicon

被引：39

作者：

Ishimaru, M ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 02期

关键词：

D O I：

10.1063/1.1425437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural relaxation processes in amorphous silicon (a-Si) have been examined by molecular-dynamics (MD) simulations using the Tersoff interatomic potential. The a-Si networks generated by rapid quenching from liquid Si were annealed. Structural changes due to the relaxation of a-Si networks were observed. The present MD simulations reproduce well experimental measurements of changes in radial distribution functions, static structure factors, bond angle distributions, and phonon densities of states due to structural relaxation. (C) 2002 American Institute of Physics.

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页码：686 / 689

页数：4

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