STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON

被引：399

作者：

BEEMAN, D

TSU, R

THORPE, MF

机构：

[1] MICHIGAN STATE UNIV,DEPT PHYS & ASTRON,E LANSING,MI 48824

[2] ENERGY CONVERS DEVICES INC,TROY,MI 48084

[3] UNIV SAO PAULO,INST FIS & QUIM SAO CARLOS,BR-13560 SAO CARLOS,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.874

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：874 / 878

页数：5

共 13 条

[1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J].

ALBEN, R ;

WEAIRE, D ;

SMITH, JE ;

BRODSKY, MH .

PHYSICAL REVIEW B, 1975, 11 (06) :2271-2296

[2] COMPUTER RESTRUCTURING OF CONTINUOUS RANDOM TETRAHEDRAL NETWORKS [J].

BEEMAN, D ;

BOBBS, BL .

PHYSICAL REVIEW B, 1975, 12 (04) :1399-1403

[3] VIBRATIONAL PROPERTIES OF ELEMENTAL AMORPHOUS-SEMICONDUCTORS [J].

BEEMAN, D ;

ALBEN, R .

ADVANCES IN PHYSICS, 1977, 26 (03) :339-361

[4] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J].

CONNELL, GAN ;

TEMKIN, RJ .

PHYSICAL REVIEW B, 1974, 9 (12) :5323-5326

[5] RANGE AND KIND OF ORDER IN RANDOM TETRAHEDRAL STRUCTURES [J].

EVANS, DL ;

TETER, MP ;

BORRELLI, NF .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 17 (02) :245-258

[6] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[7]

LANNIN J, 1984, AMORPHOUS HYDROGENAT, V2

[8]

Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

[9]

POLK DE, 1973, PHYS REV LETT, V31, P42

[10] RAMAN-SCATTERING SELECTION-RULE BREAKING AND DENSITY OF STATES IN AMORPHOUS MATERIALS [J].

SHUKER, R ;

GAMMON, RW .

PHYSICAL REVIEW LETTERS, 1970, 25 (04) :222-&

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