VIBRATIONAL PROPERTIES OF ELEMENTAL AMORPHOUS-SEMICONDUCTORS

[1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J]. PHYSICAL REVIEW B, 1975, 11 (06) : 2271 - 2296

[2] ONE-BAND DENSITY OF STATES FOR POLK MODEL FOR AMORPHOUS TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20): : L384 - L386

[3] EXACT RESULTS FOR A 3-DIMENSIONAL ALLOY WITH SITE DIAGONAL DISORDER - COMPARISON WITH COHERENT POTENTIAL APPROXIMATION [J]. PHYSICAL REVIEW B, 1975, 12 (10) : 4090 - 4094

[4] ONE-BAND DENSITY OF STATES FOR SOME MODELS FOR AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (21): : L468 - L472

[5] [Anonymous], 1964, PHYS REV

[6] AXE JD, AIP C P, V20, P249

[7] COMPUTER RESTRUCTURING OF CONTINUOUS RANDOM TETRAHEDRAL NETWORKS [J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1399 - 1403

[8] BEEMAN D, 1976, AIP C P, V31, P245

[9] Born M, 1914, ANN PHYS-BERLIN, V44, P605

[10] INFRARED VIBRATIONAL-SPECTRA OF AMORPHOUS SI AND GE [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1646 - 1651

[1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J]. PHYSICAL REVIEW B, 1975, 11 (06) : 2271 - 2296

[2] ONE-BAND DENSITY OF STATES FOR POLK MODEL FOR AMORPHOUS TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20): : L384 - L386

[3] EXACT RESULTS FOR A 3-DIMENSIONAL ALLOY WITH SITE DIAGONAL DISORDER - COMPARISON WITH COHERENT POTENTIAL APPROXIMATION [J]. PHYSICAL REVIEW B, 1975, 12 (10) : 4090 - 4094

[4] ONE-BAND DENSITY OF STATES FOR SOME MODELS FOR AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (21): : L468 - L472

[5] [Anonymous], 1964, PHYS REV

[6] AXE JD, AIP C P, V20, P249

[7] COMPUTER RESTRUCTURING OF CONTINUOUS RANDOM TETRAHEDRAL NETWORKS [J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1399 - 1403

[8] BEEMAN D, 1976, AIP C P, V31, P245

[9] Born M, 1914, ANN PHYS-BERLIN, V44, P605

[10] INFRARED VIBRATIONAL-SPECTRA OF AMORPHOUS SI AND GE [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1646 - 1651