Effect of a metallic interfacial layer on peel strength deterioration between a Cu thin film and a polyimide substrate

被引:15
作者
Iwamori, S
Miyashita, T
Fukuda, S
Fukuda, N
Sudoh, K
机构
[1] Central Research Institute, Mitsui Toatsu Chemicals, Inc., Sakae-ku, Yokohama
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 01期
关键词
D O I
10.1116/1.589255
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The peel strength of a copper (Cu) thin film deposited on a polyimide (PI) substrate deteriorates after heat treatment at 150 degrees C in air. The deterioration involves Cu2O microparticles (10-100 nm) penetrating the PI substrate, both the substrate and film being oxidized. To prevent this penetration and oxidation, we introduced an interfacial layer (vanadium, titanium, or cobalt) at the interface between the Cu thin film and PI substrate. Both titanium and cobalt interfacial layers were effective as barriers against the penetration of Cu2O particles. The quality of the interfacial layers (e.g., quantity of dislocations) influenced their effectiveness. By annealing the cobalt interfacial layers at 280 degrees C for 1 h in a vacuum before sputter deposition of a Cu thin film, we succeeded in keeping the peel strength between the Cu thin him and the PI substrate above 0.1 N/m even after heat treatment of the laminate at 150 degrees C for three days. (C) 1997 American Vacuum Society.
引用
收藏
页码:53 / 59
页数:7
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